Kinetics and modeling of sublimation growth of silicon carbide bulk crystal

Citation
Qs. Chen et al., Kinetics and modeling of sublimation growth of silicon carbide bulk crystal, J CRYST GR, 224(1-2), 2001, pp. 101-110
Citations number
23
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
00220248 → ACNP
Volume
224
Issue
1-2
Year of publication
2001
Pages
101 - 110
Database
ISI
SICI code
0022-0248(200104)224:1-2<101:KAMOSG>2.0.ZU;2-2
Abstract
A growth kinetics model, which assumes that the growth rate is related to t he supersaturation of a rate-determining reactant, is developed to study th e mechanism of silicon carbide growth by physical vapor transport. To exami ne the dependence of growth rate on growth temperature and inert gas pressu re, two different growth conditions are considered, one with a small axial temperature gradient in the growth chamber, 2 K/cm, and the other with a la rge axial temperature gradient, 20K/cm. The study is conducted for a range of inert gas pressure as well as the growth temperature. It is observed tha t the growth rate has an Arrhenius-like dependence on growth temperature ex cept when the growth temperature is high. The low temperature growth is usu ally associated with a small-scale system that has a larger axial temperatu re gradient, while the high temperature growth occurs in a scaled-up system . An integrated model that considers the RF induction heating, radiation-co nduction heat transfer and growth kinetics, has been developed to predict t he magnetic field, temperature distribution and growth rate profile. The mo del can help in the design and development of large-scale growth systems. ( C) 2001 Published by Elsevier Science B.V.