REFLECTANCE SPECTROSCOPY ON GAN FILMS UNDER UNIAXIAL-STRESS

The uniaxial stress effects on valence band structures in GaN are inve stigated by reflectance spectroscopy. It is observed that the energy s eparation between A and B valence bands increases with the application of uniaxial stress in the c plane. The experimental results are analy zed on the basis of the k.p theory, and deformation potential D-5 is d etermined as -3.3 eV. It is indicated that the uniaxial strain effect could be utilized for improving GaN-based laser performance. (C) 1997 American Institute of Physics.