ELECTRON-MICROSCOPIC AND OPTICAL INVESTIGATIONS OF THE INDIUM DISTRIBUTION GAAS CAPPED INXGA1-XAS ISLANDS

Authors
WOGGON U LANGBEIN W HVAM JM ROSENAUER A REMMELE T GERTHSEN D
Citation
U. Woggon et al., ELECTRON-MICROSCOPIC AND OPTICAL INVESTIGATIONS OF THE INDIUM DISTRIBUTION GAAS CAPPED INXGA1-XAS ISLANDS, Applied physics letters, 71(3), 1997, pp. 377-379
Citations number
11
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
71
Issue
3
Year of publication
1997
Pages
377 - 379
Database
ISI
SICI code
0003-6951(1997)71:3<377:EAOIOT>2.0.ZU;2-#
Abstract
Results from a structural and optical analysis of buried InxGa1-xAs is lands carried out after the process of GaAs overgrowth are presented. It is found that during the growth process, the indium concentration p rofile changes and the thickness of the wetting layer emanating from a Stranski-Krastanow growth mode grows significantly. Quantum dots are formed due to strong gradients in the indium concentration, which is d emonstrated by photoluminescence and excitation spectroscopy of the bu ried InxGa1-xAs islands. (C) 1997 American Institute of Physics.