EFFECT OF CAPPING LAYERS ON ACTIVATION OF BE AS-IMPLANTED SEMIINSULATING INP-FE/

Be/As-coimplanted semi-insulating InP:Fe samples have been activated b y rapid thermal annealing using two different capping layers to protec t the surface during activation. Activated samples are investigated us ing Hall measurements, transmission electron microscopy, and secondary ion mass spectrometry. It is found that borosilicate glass capping re sults in more abrupt Be profiles as compared with aluminum oxide. Alum inum oxide capped samples show better electrical properties. However, an electrically dead layer and dislocation loop at the surface are obs erved in aluminum oxide capped samples. These results can be related t o stress in the capped films during the activation process. (C) 1997 A merican Institute of Physics.