Structure and property characterization of low-k dielectric porous thin films

Citation
Bj. Bauer et al., Structure and property characterization of low-k dielectric porous thin films, J ELEC MAT, 30(4), 2001, pp. 304-308
Citations number
9
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF ELECTRONIC MATERIALS
ISSN journal
03615235 → ACNP
Volume
30
Issue
4
Year of publication
2001
Pages
304 - 308
Database
ISI
SICI code
0361-5235(200104)30:4<304:SAPCOL>2.0.ZU;2-W
Abstract
A novel methodology is developed that uses a combination of high energy ion scattering, x-ray reflectivity, and small angle neutron scattering to char acterize the structure and properties of porous thin films. Ion scattering is used to determine the elemental composition of the film for absolute int ensity calibration of the x-ray and neutron scattering techniques. X-ray re flectivity is used to measure the average electron density and film thickne ss. Small angle neutron scattering is used to determine the pore size, stru cture, and connectivity. Combining information from all three techniques, t he film porosity and matrix material density can be uniquely determined.