Ggb. De Souza et al., Valence electronic excitation of the SiF4 molecule: generalized oscillatorstrength for the 5t(2)-> 6a(1) transition and ab initio calculation, J PHYS B, 34(6), 2001, pp. 1005-1017
Citations number
38
Categorie Soggetti
Physics
Journal title
JOURNAL OF PHYSICS B-ATOMIC MOLECULAR AND OPTICAL PHYSICS
The electronic excitation of the silicon tetrafluoride (SiF4) molecule has
been studied using the angle-resolved electron energy-loss technique, at 1.
0 keV incident electron energy, in the 0-50 eV energy range with an angular
range of 1.5 degrees -20.0 degrees. The absolute generalized oscillator st
rength (GOS) for the 5t(2) --> 6a(1) electronic transition, located at 13.0
eV, has been determined. A minimum has been observed in the GOS for this t
ransition at K-2 = 1.4 au. We have also determined the absolute elastic and
inelastic differential cross sections at I keV. In order to help in the in
terpretation of the experimental results, ab initio calculations have been
performed for the vertical valence transitions and ionization energies for
the SiF4 molecule. Configuration-interaction calculations, including single
and double excitations (CI-SD) and the symmetry-adapted-cluster expansion
(SAC) were used. The CI-SD approach was also employed to obtain the optical
oscillator strength for the 5t(2) --> 6a(1) transition.