Liquid phase epitaxial growth and morphology of InSb quantum dots

In this paper we report on the morphology of InSb quantum dots (QDs) grown by liquid phase epitaxy on InAs and GaAs substrates. Small and large QDs ar e observed on both these two substrates, the resulting structures being gen erally similar to those produced by MBE and MOVPE. The density of the small QDs is approximately 10(10) cm(-2), with dimensions of 5-15 nm in height a nd 0.1-0.3 aspect ratio. The density, size and shape of the small QDs were found to change with growth temperature, supercooling and melt-substrate co ntact time. The large QDs appear to be at a much lower density, being appro ximately 2 x 10(7) and 1 x 10(9) cm(-2) for growth on GaAs and InAs substra tes, respectively. Furthermore, it was found that the difference in QD diam eters becomes smaller as the lattice mismatch decreases.