Electrical and optical properties of alpha-In2Se3 single crystals with an indium excess

Authors
Kim, NO Kim, HG Lim, HJ Lee, CI Jin, MS Yoon, CS Kim, WT
Citation
No. Kim et al., Electrical and optical properties of alpha-In2Se3 single crystals with an indium excess, J KOR PHYS, 38(4), 2001, pp. 405-408
Citations number
11
Categorie Soggetti
Physics
Journal title
JOURNAL OF THE KOREAN PHYSICAL SOCIETY
ISSN journal
03744884 → ACNP
Volume
38
Issue
4
Year of publication
2001
Pages
405 - 408
Database
ISI
SICI code
0374-4884(200104)38:4<405:EAOPOA>2.0.ZU;2-4
Abstract
alpha -In2Se3 single crystals with an indium excess were grown by using the Bridgman method. Tile electrical conductivity, tile Hall mobility, and til e carrier concentration of tile single crystals were measured, and their te mperature dependences were investigated. Tile optical absorption and photol uminescence spectra of the single crystals were measured at 5 K.