Thermal etching effects on InGaN/GaN and GaN/AlGaN quantum well structuresduring metalorganic chemical vapor deposition

Tile in-situ thermal etching effect during metalorganic chemical vapor depo sition of InGaN/GaN and GaN/AlGaN quantum Reil (QW) structures has been stu died. Tile InGaN and tile GaN were seriously etched by thermal decompositio n in the InGaN/GaN and the GaN/AlGaN quantum well structures. Tile transmis sion electron microscope image showed that tile InGaN/GaN QW layers were th ermally etched as the substrate temperature was increased after QW growth. Also, tile GaN/AlGaN emission peak was blue-shifted with increasing growth interruption time at the heterointerfaces, which was related to tile therma l etching effect.