Photogeneration in an acceptor-type poly(phenylenevinylene)

Citation
D. Hertel et al., Photogeneration in an acceptor-type poly(phenylenevinylene), MOLEC CRYST, 355, 2001, pp. 175-190
Citations number
23
Categorie Soggetti
Physical Chemistry/Chemical Physics
Volume
355
Year of publication
2001
Pages
175 - 190
Database
ISI
SICI code
Abstract
Stationary photoconduction in thin films of a cyano-phenylamine-substituted poly-phenylenevinylene, in both sandwich and gap arrangement, has been stu died. In order to separate electrode from bulk effects a thin layer of SiOx could be inserted between the indium-tinoxide (ITO) electrode and the film . Photocurrents were measured as a function of electric field, temperature (100 to 300K), photon energy (2.5 to 5 eV) and polarity of the applied bias . The results indicate that for h upsilon P < 3.2 eV the photocurrent is a superposition of bulk ionization involving relaxed singlet excitons and, de pending on the direction of the electric field, exciton induced injection o f predominantly electrons from the ITO. For h<upsilon> > 3.2 eV intrinsic p hotogeneration from hot singlet excitons takes over.