A. Kadashchuk et al., Photoinduced metastability and degradation of poly[methyl(phenyl)silylene]as seen by thermoluminescence, MOLEC CRYST, 355, 2001, pp. 413-428
Photodegradation of pory[methyl(phenyl)silylene] (PMPSi) was studied by tow
-temperature thermoluminescence and photoluminescence. It has been found th
at this process is nearly reversible at moderate UV exposure; the reverse r
eaction could be accelerated thermally. The activation energy of the anneal
ing process was determined as 0.65 eV. Different character of the photadegr
adation was found under the excitation with 366 nm and 250-280 nm light at
room temperature (i.e., within sigma-sigma* and pi-pi *transitions, respect
ively), sigma-sigma* excitation leads to the formation of deep charge carri
er traps (E-t= 0.45 eV) of photodestructive origin which are associated wit
h photoscission of Si bonds in the backbone. The presence of electron accep
tor dopants strongly inhibits the trapping ability of these traps.