THEORETICAL STM IMAGES OF IN GE(310) SURFACE

Indium adsorption on Ge(310) has been studied using the DV-X alpha met hod. The most stable adsorption site is determined. The calculated occ upied-state and unoccupied-state STM plots are given. Although the plo ts are proportional to the currents at a constant tip height, we compa re our calculated plots with experimental images to verify the possibl e structure of Ge(310) on which In and Ge were adsorbed. We also concl ude that the weaker maximum in the unoccupied-state image is contribut ed by a Ge adatom. (C) 1997 Published by Elsevier Science B.V.