Thomas-Fermi approximation in two p-type delta-doped quantum wells in GaAsand Si

Thomas-Fermi calculations of the hole subband structure in two coupled p-ty pe delta -doped GaAs and Si quantum wells are carried out as a function of the impurity concentration and the distance l between them. A simple formul a is obtained for the potential as a function of these two magnitudes by bo th types of systems. The numerical results for a double Be-delta -doped GaA s (double B-delta -doped Si) quantum well show that the energy levels degen erate for l greater than or equal to 300 Angstrom (l greater than or equal to 200 Angstrom) for an impurity concentration of 1 x 10(13) cm(-2).