Pulsed magnetic field processing of silicon substrates prior to thermal spray film deposition

Citation
Mn. Levin et al., Pulsed magnetic field processing of silicon substrates prior to thermal spray film deposition, TECH PHYS L, 27(4), 2001, pp. 279-280
Citations number
8
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
TECHNICAL PHYSICS LETTERS
ISSN journal
10637850 → ACNP
Volume
27
Issue
4
Year of publication
2001
Pages
279 - 280
Database
ISI
SICI code
1063-7850(2001)27:4<279:PMFPOS>2.0.ZU;2-W
Abstract
Prior to depositing thin metal sulfide films by spraying aqueous solutions of thiocarbamide complexes of the corresponding metals onto heated silicon substrates, the semiconductor substrates were subjected to a pulsed magneti c field treatment. This additional processing considerably decreases hydrop hobicity of the silicon wafer surface, thus favoring the subsequent formati on of high-quality homogeneous sulfide films with good adhesion to the subs trate. (C) 2001 MAIK "Nauka/Interperiodica".