Prior to depositing thin metal sulfide films by spraying aqueous solutions
of thiocarbamide complexes of the corresponding metals onto heated silicon
substrates, the semiconductor substrates were subjected to a pulsed magneti
c field treatment. This additional processing considerably decreases hydrop
hobicity of the silicon wafer surface, thus favoring the subsequent formati
on of high-quality homogeneous sulfide films with good adhesion to the subs
trate. (C) 2001 MAIK "Nauka/Interperiodica".