EFFECTS OF SO2 AND I-2 ON THE PHOTOLUMINESCENCE OF OXIDIZED POROUS SILICON

Authors
KELLY MT BOCARSLY AB
Citation
Mt. Kelly et Ab. Bocarsly, EFFECTS OF SO2 AND I-2 ON THE PHOTOLUMINESCENCE OF OXIDIZED POROUS SILICON, Chemistry of materials, 9(7), 1997, pp. 1659-1664
Citations number
30
Categorie Soggetti
Chemistry Physical","Material Science
Journal title
Chemistry of materials → ACNP
ISSN journal
08974756
Volume
9
Issue
7
Year of publication
1997
Pages
1659 - 1664
Database
ISI
SICI code
0897-4756(1997)9:7<1659:EOSAIO>2.0.ZU;2-1
Abstract
The photoinduced visible light emission from lightly oxidized porous s ilicon can be reversibly quenched by both sulfur dioxide molecules and iodine molecules. Possible mechanisms for these processes are compare d to the better understood mechanism for, Bronsted base quenching of p orous silicon photoemission. Supporting evidence was obtained through infrared spectroscopy, electron paramagnetic resonance spectroscopy,an d surface chemistry. The feasibility of fashioning a SO2 sensor using oxidized porous silicon is also discussed.