Using an electrically pumped multisection technique, we have directly measu
red the internal optical mode loss of semiconductor-laser structures contai
ning 1, 3, 5, and 7 layers of uncoupled InGaAs quantum dots. The optical lo
ss does not increase with the number of dot layers so higher net modal gain
can be achieved by using multiple layers. The maximum modal gain obtained
from the ground state increases with dot layer number from 10 +/-4 cm(-1) f
or a single layer to 49 +/-4 cm(-1) for the 7 layer sample, which is typica
l of the threshold gain requirement of a 350 mum long device with uncoated
facets. (C) 2001 American Institute of Physics.