Bs. Ryvkin et al., Photon energy dependence of the sign of the current-induced absorption polarization sensitivity in degenerate semiconductors, APPL PHYS L, 78(18), 2001, pp. 2655-2657
We theoretically analyze the effect of current-induced polarization depende
nce of absorption (fundamental and intersubband) and gain in degenerate sem
iconductors. The sign of the currentinduced polarization selectivity of abs
orption is shown to depend on the energy of the initial (or final) state of
the transition with respect to the Fermi level and, therefore, on the phot
on energy. The effect is predicted to be important for understanding and, p
otentially, engineering polarization properties of devices such as vertical
-cavity surface-emitting lasers. (C) 2001 American Institute of Physics.