Observation and modeling of random telegraph signals in the gate and draincurrents of tunneling metal-oxide-semiconductor field-effect transistors

Parallel measurements of random telegraph signals (RTS) in the gate and dra in currents of n-metal-oxide-semiconductor field-effect transistors with 1. 3-nm-thin gate oxides are presented. RTS appear simultaneously in both curr ents. Contrary to what could be expected, the signals have opposite signs i n the gate and drain currents. A model is proposed to explain this phenomen on by the Schottky effect. The relative amplitude of the signal fluctuation in the gate current is significantly higher than that in the drain current . Therefore, the gate current is a much more sensitive indicator for RTS th an the drain current. (C) 2001 American Institute of Physics.