Self-organized (553)B In0.15Ga0.85As/GaAs quantum-wire field-effect transistors

Extremely uniform and high-density In0.15Ga0.85As/GaAs quantum wires (QWRs) were naturally formed on a (553)B-oriented GaAs substrate by molecular-bea m epitaxy. The density of the QWRs is as high as 4.0x10(5) cm(-1). The stro ng photoluminescence peak at lambda =868 nm from the (553)B QWRs shows a la rge polarization anisotropy [p=(I-parallel to-I-perpendicular to)/(I-parall el to+I-perpendicular to)=0.22] and a very small full width at half maximum of 9.2 meV at 12 K. Based on the modulation-doped (553)B QWR structure, se lf-organized QWR field-effect transistors were fabricated (the channel alon g the QWRs' direction). The devices demonstrate very good saturation charac teristics and pinch-off behavior at room temperature. A maximum transconduc tance (g(m)) of 135 mS/mm is measured for 2 mum gate-length devices. (C) 20 01 American Institute of Physics.