Near-room-temperature operation of an InAs/GaAs quantum-dot infrared photodetector

Authors
Tang, SF Lin, SY Lee, SC
Citation
Sf. Tang et al., Near-room-temperature operation of an InAs/GaAs quantum-dot infrared photodetector, APPL PHYS L, 78(17), 2001, pp. 2428-2430
Citations number
9
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
78
Issue
17
Year of publication
2001
Pages
2428 - 2430
Database
ISI
SICI code
0003-6951(20010423)78:17<2428:NOOAIQ>2.0.ZU;2-X
Abstract
A ten-stacked self-assembled InAs/GaAs quantum-dot infrared photodetector o perated in the 2.5-7 mum range by photovoltaic and photoconductive mixed-mo de near-room-temperature operation (greater than or equal to 250 K) was dem onstrated. The specific peak detectivity D* is 2.4x10(8) cm Hz(1/2)/W at 25 0 K. The use of high-band-gap Al0.3Ga0.7As barriers at both sides of the In As quantum-dot structure and the long carrier recombination time are the ke y factors responsible for its near-room-temperature operation. (C) 2001 Ame rican Institute of Physics.