Stoichiometry-induced roughness on antimonide growth surfaces

Authors
Bracker, AS Nosho, BZ Barvosa-Carter, W Whitman, LJ Bennett, BR Shanabrook, BV Culbertson, JC
Citation
As. Bracker et al., Stoichiometry-induced roughness on antimonide growth surfaces, APPL PHYS L, 78(17), 2001, pp. 2440-2442
Citations number
18
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
78
Issue
17
Year of publication
2001
Pages
2440 - 2442
Database
ISI
SICI code
0003-6951(20010423)78:17<2440:SROAGS>2.0.ZU;2-H
Abstract
Phase shifts in the intensity oscillation of reflection high-energy electro n diffraction spots provide evidence for monolayer island formation on AlSb that is caused by sudden changes in surface stoichiometry. High-resolution scanning tunneling microscopy confirms the interpretation of the phase shi ft. These results are consistent with a previous structural assignment of t he AlSb beta (4x3) and alpha (4x3) surface reconstructions and provide guid elines for producing smooth interfaces in antimonide-based heterostructures .