Cooperative nucleation and evolution in InGaAs quantum dots in multiply stacked structures

Citation
Qh. Xie et al., Cooperative nucleation and evolution in InGaAs quantum dots in multiply stacked structures, APPL PHYS L, 78(17), 2001, pp. 2491-2493
Citations number
14
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
78
Issue
17
Year of publication
2001
Pages
2491 - 2493
Database
ISI
SICI code
0003-6951(20010423)78:17<2491:CNAEII>2.0.ZU;2-M
Abstract
We report a type of vertical self-organization of In0.6Ga0.4As quantum dots (QDs) wherein the dot density for the top layer (N-T) doubles that of the seed layer (N-S). The experimental observation fits well with a scheme of Q D vertical self-organization accompanied by additional cooperative dot nucl eation at the face centers of an approximate two-dimensional array defined by the embedded seed dots. The dots in the top layer undergo a shape transi tion from {023} to {011} and a simultaneous shape stabilization and size eq ualization. (C) 2001 American Institute of Physics.