A. Fissel et al., On the nature of the D-1-defect center in SiC: A photoluminescence study of layers grown by solid-source molecular-beam epitaxy, APPL PHYS L, 78(17), 2001, pp. 2512-2514
Undoped and boron-doped SiC layers are grown on hexagonal SiC(0001) substra
tes by means of solid-source molecular-beam epitaxy. Hexagonal 4H- and 6H-S
iC layers are grown homoepitaxially via step-controlled epitaxy, whereas th
e cubic 3C-SiC is grown pseudomorphically via nucleation and subsequent ste
p flow. The low-temperature photoluminescence spectra only show the well-kn
own emission lines of the so-called D-1 center. The line positions are comp
ared with results of first-principles calculations. The growth conditions,
the line shape, and the line shift with the polytype support an interpretat
ion as bound-exciton recombination at a native-defect complex that contains
a Si vacancy. (C) 2001 American Institute of Physics.