Proton irradiation of InAs/AlSb/GaSb resonant interband tunneling diodes

Room temperature current-voltage measurements have been made on InAs/AlSb/G aSb resonant interband tunnel diodes irradiated with 2 MeV protons to deter mine the effect of displacement damage on the negative resistance peak curr ent I-p and the peak-to-valley current ratio P/V. Diodes with 5 and 13 ML A lSb barrier thickness were irradiated and measured several times until the total fluences reached 1x10(15) and 2x10(14) H+/cm(2), respectively. The cu rrent due to radiation-induced defects has a nonlinear voltage dependence, with a large increase occurring in the voltage range between the negative r esistance peak and the valley. I-p increased < 50% while a large increase i n the valley current decreased the P/V ratios to about 2. (C) 2001 American Institute of Physics.