Mg2SnO4 ceramics II. Electrical characterization

Citation
Am. Azad et al., Mg2SnO4 ceramics II. Electrical characterization, CERAM INT, 27(3), 2001, pp. 335-341
Citations number
23
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
CERAMICS INTERNATIONAL
ISSN journal
02728842 → ACNP
Volume
27
Issue
3
Year of publication
2001
Pages
335 - 341
Database
ISI
SICI code
0272-8842(2001)27:3<335:MCIEC>2.0.ZU;2-5
Abstract
The inverse spinel-structured Mg2SnO4 possessing steady capacitance over th e temperature range between 27 and 300 degreesC in a frequency domain spann ing nearly four decades has been examined by an a.c. technique. The samples investigated in this study were synthesized by using solid state reaction (SSR) and self-heat-sustained (SHS) techniques. The a.c. immittance (impeda nce or admittance) measurements in the frequency range 5 Hz-13 MHz were car ried out on bodies sintered at 1500 degreesC:6 h and 1600 degreesC/2 h. The acquired electrical data exhibited relaxation in the Z*-plane alone, in th e form of a small are of a large semicircle. The magnitude of the terminal capacitance was found to be in a narrow window of similar to8-11 pF, while the average dielectric constant was about 10. Further analysis also reveale d that this material system possessed ultra-low temperature coefficient of capacitance (TCC) and dielectric constant (TCK) along with very small magni tude of loss tangent. (C) 2001 Elsevier Science Ltd and Techna S.r.l. All r ights reserved.