Transmission electron microscopical studies of the layered structure of the ternary semiconductor CuIn5Se8

Citation
At. Tham et al., Transmission electron microscopical studies of the layered structure of the ternary semiconductor CuIn5Se8, CRYST RES T, 36(3), 2001, pp. 303-308
Citations number
9
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
CRYSTAL RESEARCH AND TECHNOLOGY
ISSN journal
02321300 → ACNP
Volume
36
Issue
3
Year of publication
2001
Pages
303 - 308
Database
ISI
SICI code
0232-1300(2001)36:3<303:TEMSOT>2.0.ZU;2-N
Abstract
The structure of the off-stoichiometric In-rich ternary phase CuIn5Se8 was studied by means of electron diffraction and high-resolution electron micro scopy. The compound shows a layered structure with a 7-layer stacking seque nce of closed-packed planes, which contains both cubit: and hexagonal stack ing of Se atoms. The studied CuIn5Se8 bulk crystal is known as the beta -ph ase of this compound.