Crystal structure of radical cation salt (BEDT-TTF)(4)(GaCl4)(2)center dotC6H5CH3

A new radical cation salt based on bis(ethylenedithio) tetrathiaful valene (BEDT-TTF) with the tetrahedral anion GaCl4-, namely, (BEDT-TTF)(4)(GaCl4)( 2).C6H5CH3, has been synthesized. The crystal structure of this salt is det ermined by X-ray diffraction analysis [a = 31.757(2) Angstrom, b = 6.8063(3 ) Angstrom, c = 34.879(2) Angstrom, beta = 90.453(4)degrees, V = 7538.8(7) Angstrom (3), space group I2/c, and Z = 4]. In the structure, the radical c ation layers alternate with the anion layers along the c-axis. The anion la yers consist of the GaCl4- tetrahedra and solvent molecules. The packing of BEDT-TTF molecules in the radical cation layer differs from that in the st ructure of the known salt (BEDT-TTF)(2)GaCl4, even though both compounds ex hibit semiconductor properties. (C) 2001 MAIK ''Nauka/Interperiodica".