A SiBiCMOS transimpedance amplifier for 10-Gb/s SONET receiver

Authors
Kim, HH Chandrasekhar, S Burrus, CA Bauman, J
Citation
Hh. Kim et al., A SiBiCMOS transimpedance amplifier for 10-Gb/s SONET receiver, IEEE J SOLI, 36(5), 2001, pp. 769-776
Citations number
16
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE JOURNAL OF SOLID-STATE CIRCUITS
ISSN journal
00189200 → ACNP
Volume
36
Issue
5
Year of publication
2001
Pages
769 - 776
Database
ISI
SICI code
0018-9200(200105)36:5<769:ASTAF1>2.0.ZU;2-P
Abstract
A transimpedance amplifier packaged with an InP p-i-n photodiode has been d emonstrated for 10-Gb/s SONET receiver. The shunt feedback transimpedance a mplifier is fabricated in 0.25-mum modular Si BICMOS technology, The transi mpedance of 55 dB Omega is achieved at a bandwidth of 9 GHz by applying shu nt peaking and filter termination at the input. The optical sensitivity of -17 dBm was measured at 10 Gb/s for a bit-error rate of 10(-12).