Yl. Xu et al., Deposition of epitaxial YBCO thin film on single domain YBCO substrate forthe development of RF components, IEEE APPL S, 11(1), 2001, pp. 2865-2868
The current trend of telecommunications has motivated an increasing need fo
r an rf component of three-dimensional complex geometry in high-performance
devices including tunable receivers, transformers, and inductors. In our p
revious work we have developed a novel substrateless cavity using single do
main YBCO. This cavity resonator has been demonstrated to exhibit a high Q
value at the rf frequency. The surface resistance of the single domain YBCO
Pt 77 K has reached a low value of 500 :Omega, comparable to those of thin
films (200 :Omega). However, in single domain YBCO, the second phase Y2BaC
uO5 (211) is unavoidable in the peritectic reaction, which can, if not well
controlled, cause severe dissipative losses. To further reduce the surface
resistance, we have deposited an YBCO thin film on the single domain YBCO
substrate covering ad non-superconducting phases. The YBCO film and the sub
strate will have the best lattice matching since they are the same species.
To study the epitaxial growth mechanisms, we have also deposited the YBCO
film on other types of substrates including YSZ. Experimental results on fi
lm synthesis, interface structure, and superconducting properties will be r
eported.