Fabrication of YBa2Cu3O7-x films on buffered metal tapes fired at low temperature by MOD method using trifluoroacetate salts

Metalorganic deposition (MOD) using trifluoroacetates is considered to be o ne of the most promising methods for coated conductors, because it enables us to obtain very high J(c) films with low-cost facilities. We have optimiz ed various processing conditions in this method and successfully obtained c ritical current density (J(c)) of 4.1MA/cm(2) (77K, 0T) for the YBa2Cu3O7-x (YBCO) film of 1800 Angstrom in thickness on CeO2 buffered YSZ single crys tal, which was fired at 800 degreesC. In the case of YBCO films on buffered metallic substrates, it is difficult to fabricate under the same depositio n condition. Then low temperature heat treatment is required for deposition on metal substrate. On the other hand, such heat treatment also permits no n-reacted BaF2 in fired film, that leads to low J(c) of the film. Therefore it is the key to fabricate YBCO film with entire reaction of BaF2 by the l ow temperature heat treatment. We have investigated chemical reactions in f iring and established a firing profile to fabricate YBCO film even at 725 d egreesC, With this profile, we can successfully fabricate the YBCO film at 725 degreesC on CeO2 buffered YSZ single crystal which has J(c) of 3.0MA/cm (2) and the YBCO film on CeO2 (sputtered) / YSZ (Ion-beam-assisted depositi on: IBAD) buffered Ni based alloy (hastelloy) tape which has J(c) of 0.81MA /cm(2).