In order to develop alternative buffer layers for YBCO coated conductors, R
E2O3 (RE=La, Pr, Sm, Eu, Gd, Tb, Ho, Yb, and Lu) thin films were studied as
candidate materials. Buffer layers were grown on Ni tapes using organometa
llic compounds that are 2,4-pentanedionates, isopropoxides, and acetates by
continuous, non-vacuum, soi-gel process. Films were annealed at 900 degree
sC-1200 degreesC under 4%H-2-Ar gas mixture. The buffer layers were charact
erized by means of ESEM, SEM, EDS, XRD and pole figure analysis. Textured,
pinhole free crack free, continuous buffer layers were obtained by using 2,
4-pentanedionates.