YBaCuO deposition by MOCVD on metallic substrates: a comparative study on buffer layers

Citation
C. Jimenez et al., YBaCuO deposition by MOCVD on metallic substrates: a comparative study on buffer layers, IEEE APPL S, 11(1), 2001, pp. 2905-2908
Citations number
5
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY
ISSN journal
10518223 → ACNP
Volume
11
Issue
1
Year of publication
2001
Part
3
Pages
2905 - 2908
Database
ISI
SICI code
1051-8223(200103)11:1<2905:YDBMOM>2.0.ZU;2-1
Abstract
YBaCuO films of about 1 mum thickness have been deposited by Metal organic chemical vapor deposition (MOCVD) on biaxially textured Ni-based substrates . Different buffer layers (MgO, YSZ, CeO2), and also NiO epitaxially grown on Ni, have been tested with subsequent YBCO deposition in the same reactor . When using NiO as first buffer layer, Ni-based substrates were oxidized i n a Rapid thermal processing system or in a conventional furnace previous t o deposition of the second buffer layer. In the present work, we study diff erent conductor architectures from tbe point of view of Tc, Jc(77K), epitax ial growth, and chemical stability of the structure.