YBaCuO deposition by MOCVD on metallic substrates: a comparative study on buffer layers

YBaCuO films of about 1 mum thickness have been deposited by Metal organic chemical vapor deposition (MOCVD) on biaxially textured Ni-based substrates . Different buffer layers (MgO, YSZ, CeO2), and also NiO epitaxially grown on Ni, have been tested with subsequent YBCO deposition in the same reactor . When using NiO as first buffer layer, Ni-based substrates were oxidized i n a Rapid thermal processing system or in a conventional furnace previous t o deposition of the second buffer layer. In the present work, we study diff erent conductor architectures from tbe point of view of Tc, Jc(77K), epitax ial growth, and chemical stability of the structure.