YBaCuO films of about 1 mum thickness have been deposited by Metal organic
chemical vapor deposition (MOCVD) on biaxially textured Ni-based substrates
. Different buffer layers (MgO, YSZ, CeO2), and also NiO epitaxially grown
on Ni, have been tested with subsequent YBCO deposition in the same reactor
. When using NiO as first buffer layer, Ni-based substrates were oxidized i
n a Rapid thermal processing system or in a conventional furnace previous t
o deposition of the second buffer layer. In the present work, we study diff
erent conductor architectures from tbe point of view of Tc, Jc(77K), epitax
ial growth, and chemical stability of the structure.