Growth of Hg0.8Pb0.2Ba2Ca2Cu3O8+delta thick films on Ag using a modified process route

Citation
Jh. Su et al., Growth of Hg0.8Pb0.2Ba2Ca2Cu3O8+delta thick films on Ag using a modified process route, IEEE APPL S, 11(1), 2001, pp. 3118-3121
Citations number
11
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY
ISSN journal
10518223 → ACNP
Volume
11
Issue
1
Year of publication
2001
Part
3
Pages
3118 - 3121
Database
ISI
SICI code
1051-8223(200103)11:1<3118:GOHTFO>2.0.ZU;2-Z
Abstract
Thick films of Hg0.8Pb0.2Ba2Cu3O8+delta (HgPb1223) superconductor were fabr icated by dip-coating Pb0.2Ba2Ca2CU3O7+delta precursor onto Ag and subseque ntly reacting in Hg vapor to form the superconducting phase. It was found t hat by "burying" the films in precursor powder during the reaction, increas ed HgPb1223 phase purity and increased size of aligned grain colonies were obtained. Such microstructural improvements lead to wider magnetization hys teresis, The optimum superconducting transition temperatures of 133 K were observed in these films. The results showed that this process has a positiv e influence on the formation and growth of HgPb1223, A pre-pressing process enabled the growth of HgPb1223 grains with relatively dense microstructure and improved connectivity. The resulting films exhibited a transport J(c) value of at least 1.5 x 10(3) A/cm(2) at 4.2 K in a zero magnetic field.