Preparation of oxide buffers on a cube-textured Ni substrate for coated conductor by CVD

NiO films have been grown by metal-organic chemical vapor deposition(MOCVD) on a cube-textured Ni substrate. At a lower deposition temperature of 400 degreesC, an amorphous film was formed. Deposited CeO2 film showed a mixed texture of (100)< 001 > and (100)< 011 > orientations. Depending on the dep osition condition, the transition from (100)< 001 > texture to (100)< 011 > orientation was observed for the CeO2 film. The NiO film was deposited at 470 degreesC for 10min, Deposition pressure was 10 Torr and the oxygen part ial pressure was 0.91 Torr, X-ray reeking curve and phi -scan showed that t he NiO film has a bi-axial texture with a (100)< 001> orientation. The out- of-plane and the in-plane deviation were measured as 4.2 degrees and 6 simi lar to7 degrees from the FWHM of (200) and (111) planes, respectively.