A comparison of buffer layer architectures on continuously processed YBCO coated conductors based on the IBAD YSZ process

Citation
Tg. Holesinger et al., A comparison of buffer layer architectures on continuously processed YBCO coated conductors based on the IBAD YSZ process, IEEE APPL S, 11(1), 2001, pp. 3359-3364
Citations number
14
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY
ISSN journal
10518223 → ACNP
Volume
11
Issue
1
Year of publication
2001
Part
3
Pages
3359 - 3364
Database
ISI
SICI code
1051-8223(200103)11:1<3359:ACOBLA>2.0.ZU;2-Y
Abstract
The microstructures of continuously processed YBa2Cu3Oy (YBCO) coated condu ctors processed with three different architectures are presented. YBCO film s were deposited directly on ion-beam-assisted deposition (IBAD) yttria-sta bilized zirconia (YSZ) or on intervening layers of Y2O3 Or CeO2. Different interfacial reactions were observed in each case. The volume changes that o ccur with the interfacial reactions were calculated based on the identified reaction products. The calculated volume changes correlate with the observ ed micostructures and appear to be an important factor in determining an op timal buffer layer system. The interfacial reactions do not preclude the at tainment of high I-c and J(c) values in these coated conductors.