Tg. Truchan et al., Effect of ion-beam parameters on in-plane texture of yttria-stabilized zirconia thin films, IEEE APPL S, 11(1), 2001, pp. 3485-3488
Biaxially textured thin films of 8-mole%-yttria-stabilized zirconia (YSZ) w
ere deposited by ion-beam-assisted deposition (IBAD) on polished Hastelloy-
C tapes. These films serve as epitaxial template layers for highly textured
Y-Ba-Cu-O superconductor thin films. YSZ films were deposited to a gross t
hickness of approximate to1.6 pm by electron beam evaporation. A 300-eV Ar/
10% O-2 ion beam bombarded the substrate at an off-normal angle during depo
sition. The ion-to-atom arrival ratio (r-value) was varied by independently
adjusting the deposition rate and the ion current density. X-ray pole figu
res and phi scans were used to investigate in-plane texture. Profilometry a
nd spectral reflectivity H ere utilized to measure the net film thickness.
A two-dimensional texture/thickness contour map was generated and used to o
ptimize the in-plane texture of the YSZ and to minimize processing time.