Effect of ion-beam parameters on in-plane texture of yttria-stabilized zirconia thin films

Citation
Tg. Truchan et al., Effect of ion-beam parameters on in-plane texture of yttria-stabilized zirconia thin films, IEEE APPL S, 11(1), 2001, pp. 3485-3488
Citations number
13
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY
ISSN journal
10518223 → ACNP
Volume
11
Issue
1
Year of publication
2001
Part
3
Pages
3485 - 3488
Database
ISI
SICI code
1051-8223(200103)11:1<3485:EOIPOI>2.0.ZU;2-#
Abstract
Biaxially textured thin films of 8-mole%-yttria-stabilized zirconia (YSZ) w ere deposited by ion-beam-assisted deposition (IBAD) on polished Hastelloy- C tapes. These films serve as epitaxial template layers for highly textured Y-Ba-Cu-O superconductor thin films. YSZ films were deposited to a gross t hickness of approximate to1.6 pm by electron beam evaporation. A 300-eV Ar/ 10% O-2 ion beam bombarded the substrate at an off-normal angle during depo sition. The ion-to-atom arrival ratio (r-value) was varied by independently adjusting the deposition rate and the ion current density. X-ray pole figu res and phi scans were used to investigate in-plane texture. Profilometry a nd spectral reflectivity H ere utilized to measure the net film thickness. A two-dimensional texture/thickness contour map was generated and used to o ptimize the in-plane texture of the YSZ and to minimize processing time.