Natural and artificial low angle grain boundaries with high current-carrying capabilities

Citation
Mp. Delamare et al., Natural and artificial low angle grain boundaries with high current-carrying capabilities, IEEE APPL S, 11(1), 2001, pp. 3788-3791
Citations number
8
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY
ISSN journal
10518223 → ACNP
Volume
11
Issue
1
Year of publication
2001
Part
3
Pages
3788 - 3791
Database
ISI
SICI code
1051-8223(200103)11:1<3788:NAALAG>2.0.ZU;2-T
Abstract
For several years, technical applications of bulk HTS YBCO superconductors are of growing interest. However, for applications which require a complex geometry of the monoliths, the Multi-Seeding Melt Growth (MSMG) and the mec hanical joining of two single-domain tiles becomes necessary. However, thes e two techniques lead to the formation of a low-angle grain boundary (GB). The influence of the seed distance (d(S)) on the properties of the GB has b een studied in order to obtain a precipitate free grain-boundary. On the to p surface of one monolith, two distances between two seeds were chosen, i.e . 4mm and 11mm. Regarding d(S)similar to 11mm, some rich-copper phases and large pores can be observed throughout the Ga In contrast, for d(S)similar to 4mm, neither residual copper-rich phases nor pores are observed within t he GB. Magneto-optical measurements performed on the sample with d(S)simila r to 4mm, revealed that the critical current density through the GB is infl uenced by the growth directions. Regarding the mechanical joining, a high c onnectivity between two adjacent domains can be obtained by using the PLD t echnique for coating of the monoliths.