We describe a sputtering system which allows the simultaneous deposition of
HTS films on both sides of wafers up to 5-inch diameter. The system consis
ts of three deposition chambers in a row to cover a wafer on both sides sim
ultaneously with three different films, such as a buffer layer, a HTS film
and a contact layer. We present data on the performance of the system, such
as temperature homogeneity at the substrate Location, the lateral distribu
tion in film thickness and composition, and the properties of the deposited
HTS films, on which we measured the critical current density, the field de
pendence of the surface resistance and the performance of stripline and dis
k resonators and filters.