Nb-3(Al,Ge) wires, made through the rapidly-heating/quenching process, are
very promising for the applications in high fields. The precursor wires wer
e fabricated by a rod-in-tube method, and several kinds of Al-Ge alloys (Al
-2at%, 5at%, 10at% and 20at%Ge) were used for the core materials. In the ea
se of Al-20at%Ge alloy core, the disordered A15 phases formed directly with
the rapidly-heating/quenching. It is necessary for the as-quenched wires t
o be additionally annealed in order to improve the superconducting properti
es through the recovery of the long-range order of A15 crystal structure. T
he best values of T-c and H-c2 (4.2 K) for the Nb3(AI,Ge) wires were 19.4 K
and 39 T, respectively. Furthermore, J(c) apparently increased with decrea
sing the AI-Ge alloy core size in the precursor wires. J(c) (4.2 K, 25 T) o
f 0.3 mum-core Nb-3(Al,Ge) wire exceeds 150 A/mm(2), which was about two ti
mes larger than that of 1.5 mum-core Nb3(Al,Ge) wire. The results of TEM ob
servation revealed that the reduction of Al-Ge alloy diameter enhanced the
volume fraction of the A15-Nb-3(Al,Ge) phases through increasing of diffusi
on pairs density in the composite. The diameter of A15 crystal grains is ab
out 100 nm, and scarcely dependent on the Al-Ge alloy core size.