Nb-based SIS mixer in the 800 GHz band

Citation
T. Noguchi et al., Nb-based SIS mixer in the 800 GHz band, IEEE APPL S, 11(1), 2001, pp. 167-170
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY
ISSN journal
10518223 → ACNP
Volume
11
Issue
1
Year of publication
2001
Part
1
Pages
167 - 170
Database
ISI
SICI code
1051-8223(200103)11:1<167:NSMIT8>2.0.ZU;2-#
Abstract
We have built a waveguide SIS mixer with Nb-based parallel-connected twin j unctions at 800 GHz which is above the gap frequency of Nb (690 GHz). Heter odyne mixing was performed at 810 GHz and a receiver noise temperature of 5 80 K (DSB), which includes noise contributions due to a vacuum window and a beam splitter, was achieved using Nb/AlOx/Nb junctions with Nb striplines, The performance of this mixer is quite good and it is shown that efficient mixing in Nb-based SIS junctions is still possible above the gap frequency , SIS mixers with Al striplines have also been fabricated and good DC I-V c haracteristics have been observed. Heterodyne measurements of these mixers are now under preparation.