Fabrication of SIS junctions for space borne submillimeter wave mixers using negative resist e-beam lithography

Authors
Peron, I Pasturel, P Schuster, KF
Citation
I. Peron et al., Fabrication of SIS junctions for space borne submillimeter wave mixers using negative resist e-beam lithography, IEEE APPL S, 11(1), 2001, pp. 377-380
Citations number
12
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY
ISSN journal
10518223 → ACNP
Volume
11
Issue
1
Year of publication
2001
Part
1
Pages
377 - 380
Database
ISI
SICI code
1051-8223(200103)11:1<377:FOSJFS>2.0.ZU;2-X
Abstract
We report on the development of a new process for the fabrication of Nb/Al- AlOx/Nb tunnel junctions for channel 1 (480-640 GHz) Superconductor-Insulat or-Superconductor (SIS) mixers of HIFI, the Heterodyne Instrument for FIRST (Far InfraRed & Submillimiter Telescope). The process is derived from a st andard self-aligned lift-off process but uses negative resist electron beam lithography (EBL) for junction definition, The junction area is tightly co ntrolled down to below 1 mum(2) without the complexity of processes using p ositive electron beam resists. We describe process parameters and experimen tal results: DC-tests and Fourier Transform Spectrometer (FTS) measurements .