We report a series of studies of grain boundary (GB) capacitance for YBa2Cu
3O7-delta (YBCO) films grown on SrTiO3 (STO) bicrystal substrates, By varyi
ng the film thickness and the width of the track containing the GB, we find
that the substrate makes no contribution to the capacitance measured using
Fiske resonances or hysteresis in most cases. This is due to the frequency
dependence of the dielectric properties of SrTiO3. We have also found that
GB capacitance per unit area c(GB) correlates with the resistance-area pro
duct R(n)A. For our own GBs and GBs reported in the literature the data is
is consistent with c(GB proportional to)(R(n)A)(-1). We attribute this to v
ariations in GB barrier properties, which reduce the active area, whilst ma
intaining locally the transport mechanism as tunneling.