Properties of trilayer SIS junctions with YBa2CU3O7-y

Authors
Jiang, YS Moriya, M Kobayashi, T Goto, T
Citation
Ys. Jiang et al., Properties of trilayer SIS junctions with YBa2CU3O7-y, IEEE APPL S, 11(1), 2001, pp. 505-508
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY
ISSN journal
10518223 → ACNP
Volume
11
Issue
1
Year of publication
2001
Part
1
Pages
505 - 508
Database
ISI
SICI code
1051-8223(200103)11:1<505:POTSJW>2.0.ZU;2-0
Abstract
In this study, we compared the surface configurations of PrGaO3(PGO) and mu ltilayers of PGO and CeO2 deposited on YBa2Cu3O7-y (YBCO) thin films. It is found that the multilayers have flatter surfaces than single layers of the same thickness. Furthermore, the voltage-current characteristics of sandwi ch type SIS junctions with a range of single barrier and double barrier thi ckness using YBCO electrodes were investigated. Double layer barriers are e ffective in suppressing electrical short circuits caused by pinholes, The j unction with a double barrier of 5nm PGO and 2.5 nm CeO2 shows a Josephson current.