We are investigating the use of very thin, small area YBa2Cu3O7-x (YBCO) fi
lms on Si substrates for application in hot-electron bolometers. Hot-electr
on bolometers produced from high-T-C materials will be favored over their l
ow-temperature counterparts in applications of radio astronomy and atmosphe
ric physics where the higher operating temperatures provide distinct advant
ages. Devices on Si can help advance this technology for bolometric space a
pplications, where a substrate is needed with good thermal conductance and
excellent IR performance, Based on our experience with YBCO bolometers and
YBCO film growth on Si, we have begun a study of sub-micrometer scale devic
es. Our typical YBCO films grown on Si by pulsed laser deposition have crit
ical temperatures of 86 K and critical currents of 1-3 x10(6) A/cm(2) at 77
K for YBCO microbridges 45 nm thick, We have made 1-2 mum wide microbridge
s from YBCO films of 25 nm to 45 nm thick. These microbridges show reduced
critical temperatures of 71 K to 81 K, respectively, related to the process
ing sequence that produces the microbridges.