Nanometer scale masked ion damage barriers in YBa2Cu3O7-delta

Authors
Kang, DJ Speaks, R Peng, NH Webb, R Jeynes, C Booij, WE Tarte, EJ Moore, DF Blamire, MG
Citation
Dj. Kang et al., Nanometer scale masked ion damage barriers in YBa2Cu3O7-delta, IEEE APPL S, 11(1), 2001, pp. 780-783
Citations number
12
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY
ISSN journal
10518223 → ACNP
Volume
11
Issue
1
Year of publication
2001
Part
1
Pages
780 - 783
Database
ISI
SICI code
1051-8223(200103)11:1<780:NSMIDB>2.0.ZU;2-1
Abstract
Josephson junctions have been formed in YBa2Cu3O-(-delta) by ion implantati on though apertures in 450nm thick Au masks using 50 keV H implants with fl uences up to 5X 10(15)cm(-2). The mask apertures were milled with a focused 30keV Ga ion beam giving a best measured electrical junction length of abo ut 70nm. Resistively shunted junction behavior has been observed over a wid e temperature range (about 10K). Sharpiro steps have also been measured on these devices. The influence of possible Ga contamination is discussed.