Fabrication procedure and yield analysis of superconducting integrated rece
ivers is reported. These chip receivers, apart from the quasi-optical SIS m
ixers, contain internal local oscillators and associated rf and de interfac
es. Due to both complexity and design requirements of the integrated circui
t, certain restrictions are applied to the standard Nb/Al/AlxOy/Nb SNEAP pr
ocess. To obtain accurate area for micron-size SIS junctions and thickness
for multi-layer SiO2 insulation, a few solutions and modifications were dev
eloped. The possibility of transfering this fabrication process worldwide h
as been proven experimentally.