Study of Y-Ba-Cu-O dc SQUID devices with resistively shunted inductances

Citation
Yq. Shen et al., Study of Y-Ba-Cu-O dc SQUID devices with resistively shunted inductances, IEEE APPL S, 11(1), 2001, pp. 920-923
Citations number
14
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY
ISSN journal
10518223 → ACNP
Volume
11
Issue
1
Year of publication
2001
Part
1
Pages
920 - 923
Database
ISI
SICI code
1051-8223(200103)11:1<920:SOYDSD>2.0.ZU;2-6
Abstract
A number of de SQUIDs with different inductance values have been fabricated in YBa2Cu3O7 thin films on MgO substrates, Resistors prepared in Au thin f ilms have been applied as shunt resistors for the SQUID inductance loop. Ch aracterisation and noise measurement have been carried out on these SQUIDs. The results are in agreement with theoretical predictions of Enpuku ef al. The use of shunt resistors has improved the performance of the SQUIDs with high inductance, and made it less dependent on the critical current of the junctions, which is not always reproducible. Furthermore, high SQUID induc tance increases the coupling efficiency of magnetic flux, for example in te rms of a better inductance matching between the SQUID and the pick-up loop in a directly coupled magnetometer. Based on this study, SQUID devices such as magnetometers and gradiometers with high field responses have been desi gned and tested.