Development of sub-micron SNS ramp-type Josephson junctions

At PTB, a fabrication technology for sub-micron superconductor-normal metal -superconductor (SNS) ramp-type Josephson junctions has been developed whic h allows these junctions to be used as active elements in highly integrated circuits. Test circuits of series arrays containing up to 10000 junctions with contact areas below 0.4 mum(2) and of single junctions with contact ar eas reduced down to 0.03 mum(2) have been successfully realized and measure d. To achieve high values of the characteristic voltage V-C, different N-La yer materials, i.e, Al, PdAu and HfTi with thicknesses down to d=15 nm and different layer sequences have been investigated. Typical parameters of SNS junctions with a thickness of the HfTi N-layer of d=20nm are about j(C)=47 0 kA/cm(2) and V-C = 100 muV The junctions realized allow for application i n superconducting circuits.