Low-noise S-band DC SQUID based amplifier

Citation
Gv. Prokopenko et al., Low-noise S-band DC SQUID based amplifier, IEEE APPL S, 11(1), 2001, pp. 1239-1242
Citations number
12
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY
ISSN journal
10518223 → ACNP
Volume
11
Issue
1
Year of publication
2001
Part
1
Pages
1239 - 1242
Database
ISI
SICI code
1051-8223(200103)11:1<1239:LSDSBA>2.0.ZU;2-W
Abstract
A low-noise rf amplifier based on a de SQUID (SQA) is tested in the frequen cy range 3.3-4.1 GHz, A new signal launching system for the SQA rf coupling has been developed and successfully implemented. The following parameters have been measured at 3.65 GHz using a band-pass filter at the input of a s ingle-stage SQA: gain (11.0 +/-1.0) dB, 3 dB bandwidth of 300 MHz and noise temperature (4.0 +/-1.0) K, This figure corresponds to a flux noise S-Phi( 1/2) approximate to 0.6 mu Phi (0)/Hz(1/2) and an energy sensitivity epsilo n (i)approximate to 75 h. The input saturation power, P-S, (1 dB gain compr ession) is measured for different bandwidths of the input band-pass filter. A corresponding input signal saturation temperature (normalized for a 1 GH z bandwidth) T-SAT(1GHZ) = P-SAT/k(B) is estimated to be 11.5 K GHz at an S QA bias voltage 27 muV (condition for minimum noise temperature). The depen dencies of the SQA gain, noise temperature and saturation level on the oper ation point are studied, A reason of the SQA saturation is discussed.