Silicon molar volume discrepancy: Studies of the NRLM crystal

Citation
K. Nakayama et al., Silicon molar volume discrepancy: Studies of the NRLM crystal, IEEE INSTR, 50(2), 2001, pp. 601-603
Citations number
10
Categorie Soggetti
Instrumentation & Measurement
Journal title
IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT
ISSN journal
00189456 → ACNP
Volume
50
Issue
2
Year of publication
2001
Pages
601 - 603
Database
ISI
SICI code
0018-9456(200104)50:2<601:SMVDSO>2.0.ZU;2-G
Abstract
A relatively large discrepancy was found in the molar volume of silicon cry stals used to determine the Avogadro constant by means of the X-ray and cry stal density (XRCD) method. Voids are suspected to cause the difference in the molar volume. Infrared laser scattering tomography, Secco-etching, elec tron spin resonance, and X-ray topography have been applied to the silicon crystal of the National Research Laboratory of Metrology to detect voids, H owever, no voids were observed in the crystal.